Senior Researcher
Ritsumeikan Global Innovation Research Organization (R-GIRO)
Ritsumeikan University, Japan

Title of the Invited Talk: Composition Controlled High-k Dielectrics via Mist CVD for 2D Layered Semiconductor-based Nanoelectronics

Abstract: The development of high-performance nanoelectronics and photonic devices requires materials capable of supporting ultra-thin architecture while delivering exceptional electrical and optical properties. High-k dielectric materials play a pivotal role in enhancing charge modulation, minimizing leakage currents, and improving capacitance, essential for device miniaturization. Traditional dielectrics typically offer either a high band gap (Eg) or high dielectric constant (κ), but not both simultaneously. In contrast, alloyed or composite dielectrics provide moderate Eg and κ values to address loss issues, yet achieving precise compositional control in their fabrication remains challenging. This talk explores the potential of composition-controlled high Eg and high κ dielectrics, alongside two-dimensional transition metal dichalcogenides (TMDCs), synthesized via Mist Chemical Vapor Deposition (Mist CVD), for application as gate dielectrics and channel layers in MOSFET devices, respectively. Mist CVD enables meticulous control over film thickness and composition at low temperatures and atmospheric pressure, facilitating the fabrication of layered structures with atomic-level precision and demonstrating competitiveness with conventional growth methods.